1 http://www.fujielectric.com/products/semiconductor/ 6MBP30VAA060-50 igbt modules igbt module (v series) 600v / 30a / ipm maximum ratings and characteristics absolute maximum ratings (t c =25oc, v cc =15v unless otherwise specifed) items symbol min. max. units collector-emitter voltage (*1) v ces 0 600 v short circuit voltage v sc 200 400 v collector current dc ic - 30 a 1ms ic pulse - 60 a duty=100% (*2) -ic - 30 a collector power dissipation 1 device (*3) pc - 137 w supply voltage of pre-driver (*4) v cc -0.5 20 v input signal voltage (*5) vin -0.5 v cc +0.5 v alarm signal voltage (*6) v alm -0.5 v cc v alarm signal current (*7) i alm - 20 ma junction temperature tj - 150 oc operating case temperature topr -20 110 oc storage temperature tstg -40 125 oc solder temperature (*8) tsol - 260 oc isolating voltage (*9) v iso - ac2500 vrms screw torque mounting (m4) - - 1.7 nm note *1: v ces shall be applied to the input voltage between terminal p-(u,v, w) and (u,v, w)-n. note *2: duty=125oc/rth(j-c)d /(i f v f max.)100 note *3: p c =125oc/rth(j-c)q note *4: v cc shall be applied to the input voltage between terminal no.3 and 1, 6 and 4, 9 and 7, 11 and 10. note *5: vin shall be applied to the input voltage between terminal no.2 and 1, 5 and 4, 8 and 7, 12~14 and 10. note *6: v alm shall be applied to the voltage between terminal no.15 and 10. note *7: i alm shall be applied to the input current to terminal no.15. note *8: immersion time 101sec. 1time. note *9: terminal to base, 50/60hz sine wave 1minute. features ? temperature protection provided by directly detecting the junction temperature of the igbts ? low power loss and soft switching ? compatible with existing ipm-n series packages ? high performance and high reliability igbt with overheating protection ? higher reliability because of a big decrease in number of parts in built-in control circuit
2 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ 3 electrical characteristics (tj=25oc, v cc =15v unless otherwise specifed) items symbol conditions min. typ. max. units inverter collector current at off signal input i ces v ce =600v - - 1.0 ma collector-emitter saturation voltage v ce(sat) i c =30a terminal - - 1.9 v chip - 1.4 - v forward voltage of fwd v f i f =30a terminal - - 2.3 v chip - 1.8 - v switching time ton v dc =300v, tj=125oc ic=30a 1.1 - - s toff - - 2.1 s trr v dc =300v i f =30a - - 0.3 s supply current of p-side pre-driver (per one unit) iccp switching frequency= 0-15khz tc=-20~110oc - - 9 ma supply current of n-side pre-driver iccn - - 23 ma input signal threshold voltage vinth(on) vin-gnd on 1.2 1.4 1.6 v vinth(off) off 1.5 1.7 1.9 v over current protection level i oc tj=125oc 45 - - a over current protection delay time t doc tj=125oc - 5 - s short circuit protection delay time t sc tj=125oc - 2 3 s igbt chips over heating protection temperature level t joh surface of igbt chips 150 - - oc over heating protection hysteresis t jh - 20 - oc under voltage protection level v uv 11.0 - 12.5 v under voltage protection hysteresis v h 0.2 0.5 - v alarm signal hold time t alm(oc) alm-gnd tc=-20~110oc 1.0 2.0 2.4 ms t alm(uv) v cc 10v 2.5 4.0 4.9 ms t alm(tjoh) 5.0 8.0 11.0 ms resistance for current limit r alm 960 1265 1570 thermal characteristics (t c = 25oc) items symbol min. typ. max. units junction to case thermal resistance (*10) inverter igbt rth(j-c)q - - 0.91 c/w fwd rth(j-c)d - - 1.50 c/w case to fin thermal resistance with compound rth(c-f) - 0.05 - c/w note *10: for 1device, the measurement point of the case is just under the chip. noise immunity (v dc =300v, v cc =15v) items conditions min. typ. max. units common mode rectangular noise pulse width 1s, polarity , 10 minute judge : no over-current, no miss operating 2.0 - - kv recommended operating conditions items symbol min. typ. max. units dc bus voltage v dc - - 400 v power supply voltage of pre-driver v cc 13.5 15.0 16.5 v arm shoot through blocking time for ipm's input signal tdead 1.0 - - s screw torque (m4) - 1.3 - 1.7 nm
2 3 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ block diagram pre -d ri ve rs i n cl u d e f o l l o w i n g f u n ct i o n s 1 . amp l i f i e r f o r d ri ve r 2 . sh o rt ci rcu i t p ro t e ct i o n 3 . u n d e r vo l t a g e l o cko u t ci rcu i t 4 . o ve r cu rre n t p ro t e ct i o n 5 . i g bt ch i p o ve r h e a t i n g p ro t e ct i o n u v w v c c v i n x v i n y v i n z a l m v c c v g n d v p v c c u g n d u v i n u v i n v v c c w g n d w v i n w n pre -d ri v e r pre -d ri v e r pre -d ri v e r pre -d ri v e r r a l m
4 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ 5 characteristics (representative) power supply current vs. switching frequency tj=25oc (typ.) 0 5 10 15 20 25 12 13 14 15 16 17 18 power supply current : icc [ma] n-side p-side vcc=17v vcc=15v vcc=13v vcc=17v vcc=15v vcc=13v switchig frequency : fsw [khz] 40 35 30 25 20 15 10 5 0 15 12 9 6 3 0 0 20 40 60 80 100 120 140 under voltage vs. junction temperature (typ.) junction temperature : tj [oc] alarm hold time vs. power supply voltage (typ.) power supply voltage : vcc [v] 10 8 6 4 2 0 12 13 14 15 16 17 18 under voltage : v uv [v] alarm hold time : t alm [msec] talm(tjoh) talm(oc) 3 2.5 2 1.5 1 0.5 0 input signal threshold voltage : vinth (on), vinth (off) [v] input signal threshold voltage vs. power supply boltage (typ.) v inth (off) tc=25~125oc v inth (on) power supply voltage : vcc [v] 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 12 13 14 15 16 17 18 under voltage hysterisis vs. junction temperature (typ.) under voltage hysterisis : v h [v] junction temperature : tj [oc] 200 150 100 50 0 over heating characteristics t joh , t jh vs. vcc (typ.) over heating protection : t joh [oc] oh hysterisis : t jh [oc] power supply voltage : vcc [v] t joh t jh
4 5 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ collector current vs. collector-emitter voltage tj=25oc [chip] (typ.) collector current : ic [a] collector-emitter voltage : v ce [v] 60 50 40 30 20 10 0 60 50 40 30 20 10 0 60 50 40 30 20 10 0 collector current vs. collector-emitter voltage tj=125oc [chip] (typ.) collector-emitter voltage : v ce [v] forward current vs. forward voltage [chip] (typ.) forward voltage : v f [v] collector current : ic [a] forward current : i f [a] collector current : ic [a] collector current vs. collector-emitter voltage tj=25oc [terminal] (typ.) collector-emitter voltage : v ce [v] collector current vs. collector-emitter voltage tj=125oc [terminal] (typ.) collector current : ic [a] forward current vs. forward voltage [terminal] (typ.) forward current : i f [a] forward voltage : v f [v] vcc=17v vcc=15v 0 0.5 1 1.5 2 2.5 vcc=17v vcc=15v vcc=13v vcc=13v 0 0.5 1 1.5 2 2.5 vcc=17v vcc=15v vcc=13v vcc=17v vcc=15v vcc=13v 0 0.5 1 1.5 2 2.5 collector-emitter voltage : v ce [v] 0 0.5 1 1.5 2 2.5 3 60 50 40 30 20 10 0 60 50 40 30 20 10 0 tj=25oc tj=25oc tj=125oc tj=125oc 0 0.5 1 1.5 2 2.5 60 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5
6 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ 7 switching loss vs. collector current (typ.) v dc =300v, vcc=15v, tj=25oc 0 10 20 30 40 50 60 switching loss : eon, eoff, err [mj/cycle] eon eoff err eon eoff fwd igbt err collector current : ic [a] 4 3 2 1 0 80 60 40 20 0 0 200 400 600 800 reversed biased safe operating area vcc=15v, tjy 125oc [main terminal] (min.) collector-emitter voltage : v ce [v] power derating for igbt (max.) [per device] case temperature : tc [oc] 200 150 100 50 0 0 20 40 60 80 100 120 collector current : i c [a] collector power dissipation : pc [w] switching loss : eon, eoff, err [mj/cycle] switching loss vs. collector current (typ.) v dc =300v, vcc=15v, tj=125oc collector current : ic [a] 10 1 0.1 0.001 0.01 0.1 1 10 0 20 40 60 80 100 120 transient thermal resistance (max.) thermal resistance : rth(j-c) [oc/w] pulse width : pw [sec] power derating for fwd(max.) [per device] collector power dissipation : pc [w] case temperature : tc [oc] 0 10 20 30 40 50 60 4 3 2 1 0 rbsoa (repetitive pulse) 150 100 50 0
6 7 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ switching time vs. collector current (typ.) v dc =300v, vcc=15v, tj=25oc 0 10 20 30 40 50 60 0 10 20 30 40 50 60 switching time : ton, toff, tr [nsec] ton toff tf 10000 1000 100 10 0 10 20 30 40 reverse recovery characteristics (typ.) t rr , i rr vs. i f forward current : i f [a] reverse recovery current : i rr [a] reverse recovery time : t rr [nsec] 10000 1000 100 10 switching time : ton, toff, tr [nsec] switching time vs. collector current (typ.) v dc =300v, vcc=15v, tj=125oc ton toff tf collector current : ic [a] collector current : ic [a] 100 80 60 40 20 0 0 20 40 60 80 100 120 140 over current protection vs. junction temperature (typ. ) vcc=15v over current protection level : ioc [a] junction temperature : tj [oc] t rr tj=125oc t rr tj=25oc i rr tj=125oc i rr tj=25oc 1000 100 10 1 outline drawings, mm
8 igbt modules 6MBP30VAA060-50 http://www.fujielectric.com/products/semiconductor/ warning 1. this catalog contains the product specifcations, characteristics, data, materials, and structures as of may 2011. the contents are subject to change without notice for specifcation changes or other reasons. when using a product listed in this catalog, be sur to obtain the latest specifcations. 2. all applications described in this catalog exemplify the use of fuji's products for your reference only. no right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by fuji electric co., ltd. is (or shall be deemed) granted. fuji electric co., ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. although fuji electric co., ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. when using fuji electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fre, or other problem if any of the products become faulty. it is recommended to make your design failsafe, fame retardant, and free of malfunction. 4. the products introduced in this catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. ? computers ? oa equipment ? communications equipment (terminal devices) ? measurement equipment ? machine tools ? audiovisual equipment ? electrical home appliances ? personal equipment ? industrial robots etc. 5. if you need to use a product in this catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact fuji electric co., ltd. to obtain prior approval. when using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a fuji's product incorporated in the equipment becomes faulty. ? transportation equipment (mounted on cars and ships) ? trunk communications equipment ? traffc-signal control equipment ? gas leakage detectors with an auto-shut-off feature ? emergency equipment for responding to disasters and anti-burglary devices ? safety devices ? medical equipment 6. do not use products in this catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). ? space equipment ? aeronautic equipment ? nuclear control equipment ? submarine repeater equipment 7. copyright ?1996-2011 by fuji electric co., ltd. all rights reserved. no part of this catalog may be reproduced in any form or by any means without the express permission of fuji electric co., ltd. 8. if you have any question about any portion in this catalog, ask fuji electric co., ltd. or its sales agents before using the product. neither fuji electric co., ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.
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